PMV280ENEAR Pricing (USD) [603830PC Stock]
- 1 pcs$0.06126
- 3,000 pcs$0.05384
- Nimewo Pati:
- PMV280ENEAR
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 100V 1.1A TO236AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMV280ENEAR electronic components. PMV280ENEAR can be shipped within 24 hours after order. If you have any demands for PMV280ENEAR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMV280ENEAR Atribi pwodwi yo
Nimewo Pati :
PMV280ENEAR
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 100V 1.1A TO236AB
Seri :
TrenchMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
385 mOhm @ 1.1A, 10V
Vgs (th) (Max) @ Id :
2.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6.8nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
190pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
580mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-236AB
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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