SQ1464EEH-T1_GE3 Pricing (USD) [586266PC Stock]
- 1 pcs$0.06309
- Nimewo Pati:
- SQ1464EEH-T1_GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CHAN 60V SC-70.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQ1464EEH-T1_GE3 electronic components. SQ1464EEH-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ1464EEH-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ1464EEH-T1_GE3 Atribi pwodwi yo
Nimewo Pati :
SQ1464EEH-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CHAN 60V SC-70
Seri :
Automotive, AEC-Q101, TrenchFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
440mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V
RD sou (Max) @ Id, Vgs :
1.41 Ohm @ 2A, 1.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4.1nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
140pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
430mW (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SC-70-6
Pake / Ka :
6-TSSOP, SC-88, SOT-363
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