Vishay Siliconix - SI3493DDV-T1-GE3

KEY Part #: K6421542

SI3493DDV-T1-GE3 Pricing (USD) [769090PC Stock]

  • 1 pcs$0.04809
  • 3,000 pcs$0.04558

Nimewo Pati:
SI3493DDV-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CHANNEL 20V 8A 6TSOP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI3493DDV-T1-GE3 electronic components. SI3493DDV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3493DDV-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI3493DDV-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI3493DDV-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CHANNEL 20V 8A 6TSOP
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 24 mOhm @ 7.5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 1825pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.6W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-TSOP
Pake / Ka : SOT-23-6 Thin, TSOT-23-6