FDD850N10LD Pricing (USD) [180202PC Stock]
- 1 pcs$0.20526
- 2,500 pcs$0.18028
- Nimewo Pati:
- FDD850N10LD
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 100V 15.3A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDD850N10LD electronic components. FDD850N10LD can be shipped within 24 hours after order. If you have any demands for FDD850N10LD, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD850N10LD Atribi pwodwi yo
Nimewo Pati :
FDD850N10LD
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 100V 15.3A DPAK
Seri :
PowerTrench®
Estati Pati :
Last Time Buy
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
15.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
75 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
28.9nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1465pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
42W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252-4L
Pake / Ka :
TO-252-5, DPak (4 Leads + Tab), TO-252AD
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