[2639PC Stock]
- Nimewo Pati:
- GP1M007A065CG
- Manifakti:
- Global Power Technologies Group
- Detaye deskripsyon:
- MOSFET N-CH 650V 6.5A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - SCR, Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Global Power Technologies Group GP1M007A065CG electronic components. GP1M007A065CG can be shipped within 24 hours after order. If you have any demands for GP1M007A065CG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M007A065CG Atribi pwodwi yo
Nimewo Pati :
GP1M007A065CG
Manifakti :
Global Power Technologies Group
Deskripsyon :
MOSFET N-CH 650V 6.5A DPAK
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.4 Ohm @ 3.25A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
27nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1201pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
120W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-Pak
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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