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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. NVMFD5873NLWFT1G

ON Semiconductor - NVMFD5873NLWFT1G

KEY Part #: K6525134

NVMFD5873NLWFT1G Pricing (USD) [83368PC Stock]

  • 1 pcs$0.46901
  • 1,500 pcs$0.42640
Nimewo Pati:
NVMFD5873NLWFT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 60V 10A SO8FL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor NVMFD5873NLWFT1G electronic components. NVMFD5873NLWFT1G can be shipped within 24 hours after order. If you have any demands for NVMFD5873NLWFT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFD5873NLWFT1G Atribi pwodwi yo

Nimewo Pati : NVMFD5873NLWFT1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 60V 10A SO8FL
Seri : -
Estati Pati : Not For New Designs
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A
RD sou (Max) @ Id, Vgs : 13 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 30.5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1560pF @ 25V
Pouvwa - Max : 3.1W
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerTDFN
Pake Aparèy Founisè : 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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