IPD100N06S403ATMA2 Pricing (USD) [102153PC Stock]
- 1 pcs$0.38277
- 2,500 pcs$0.29536
- Nimewo Pati:
- IPD100N06S403ATMA2
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 60V 100A TO252-3-11.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Tiristors - SCR - Modil yo, Transistors - JFETs, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Diodes - RF and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPD100N06S403ATMA2 electronic components. IPD100N06S403ATMA2 can be shipped within 24 hours after order. If you have any demands for IPD100N06S403ATMA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD100N06S403ATMA2 Atribi pwodwi yo
Nimewo Pati :
IPD100N06S403ATMA2
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 60V 100A TO252-3-11
Seri :
Automotive, AEC-Q101, OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 90µA
Chaje Gate (Qg) (Max) @ Vgs :
128nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
10400pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO252-3-11
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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