Nimewo Pati :
TJ60S06M3L(T6L1,NQ
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 60V 60A DPAK-3
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
60A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
11.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
156nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
7760pF @ 10V
Disipasyon Pouvwa (Max) :
100W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DPAK+
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63