ON Semiconductor - HGTP12N60C3D

KEY Part #: K6423020

HGTP12N60C3D Pricing (USD) [23675PC Stock]

  • 1 pcs$1.74077
  • 800 pcs$1.01238

Nimewo Pati:
HGTP12N60C3D
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 600V 24A 104W TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - JFETs, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Modil pouvwa chofè and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor HGTP12N60C3D electronic components. HGTP12N60C3D can be shipped within 24 hours after order. If you have any demands for HGTP12N60C3D, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HGTP12N60C3D Atribi pwodwi yo

Nimewo Pati : HGTP12N60C3D
Manifakti : ON Semiconductor
Deskripsyon : IGBT 600V 24A 104W TO220AB
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 24A
Kouran - Pèseptè batman (Icm) : 96A
Vce (sou) (Max) @ Vge, Ic : 2.2V @ 15V, 15A
Pouvwa - Max : 104W
Oblije chanje enèji : 380µJ (on), 900µJ (off)
Kalite Antre : Standard
Gate chaje : 48nC
Td (on / off) @ 25 ° C : -
Kondisyon egzamen an : -
Ranvèse Tan Reverse (trr) : 40ns
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220-3