APT50GP60B2DQ2G Pricing (USD) [6527PC Stock]
- 1 pcs$7.50953
- 10 pcs$6.82512
- 25 pcs$6.31312
- 100 pcs$5.80124
- 250 pcs$5.28935
- Nimewo Pati:
- APT50GP60B2DQ2G
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- IGBT 600V 150A 625W TMAX.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Tiristors - SCR, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT50GP60B2DQ2G electronic components. APT50GP60B2DQ2G can be shipped within 24 hours after order. If you have any demands for APT50GP60B2DQ2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT50GP60B2DQ2G Atribi pwodwi yo
Nimewo Pati :
APT50GP60B2DQ2G
Manifakti :
Microsemi Corporation
Deskripsyon :
IGBT 600V 150A 625W TMAX
Seri :
POWER MOS 7®
Estati Pati :
Not For New Designs
Kalite IGBT :
PT
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
150A
Kouran - Pèseptè batman (Icm) :
190A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 50A
Pouvwa - Max :
625W
Oblije chanje enèji :
465µJ (on), 635µJ (off)
Kalite Antre :
Standard
Gate chaje :
165nC
Td (on / off) @ 25 ° C :
19ns/85ns
Kondisyon egzamen an :
400V, 50A, 4.3 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3 Variant
Pake Aparèy Founisè :
-
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