[13427PC Stock]
- Nimewo Pati:
- SUD06N10-225L-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 100V 6.5A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Modil pouvwa chofè and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SUD06N10-225L-GE3 electronic components. SUD06N10-225L-GE3 can be shipped within 24 hours after order. If you have any demands for SUD06N10-225L-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUD06N10-225L-GE3 Atribi pwodwi yo
Nimewo Pati :
SUD06N10-225L-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 100V 6.5A DPAK
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
200 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
240pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.25W (Ta), 16.7W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252AA
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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