Vishay Siliconix - SUD06N10-225L-GE3

KEY Part #: K6412492

[13427PC Stock]


    Nimewo Pati:
    SUD06N10-225L-GE3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 100V 6.5A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo and Tiristors - DIACs, SIDACs ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SUD06N10-225L-GE3 electronic components. SUD06N10-225L-GE3 can be shipped within 24 hours after order. If you have any demands for SUD06N10-225L-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SUD06N10-225L-GE3 Atribi pwodwi yo

    Nimewo Pati : SUD06N10-225L-GE3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 100V 6.5A DPAK
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 100V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.5A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 200 mOhm @ 3A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 4nC @ 5V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 240pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.25W (Ta), 16.7W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : TO-252AA
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63