[13426PC Stock]
- Nimewo Pati:
- FDD16AN08A0-F085
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 75V 50A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDD16AN08A0-F085 electronic components. FDD16AN08A0-F085 can be shipped within 24 hours after order. If you have any demands for FDD16AN08A0-F085, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD16AN08A0-F085 Atribi pwodwi yo
Nimewo Pati :
FDD16AN08A0-F085
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 75V 50A DPAK
Seri :
Automotive, AEC-Q101, UltraFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9A (Ta), 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
16 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
47nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1874pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
135W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252AA
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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