BSM10GD120DN2E3224BOSA1 Pricing (USD) [1642PC Stock]
- 1 pcs$26.36640
- Nimewo Pati:
- BSM10GD120DN2E3224BOSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 2 LOW POWER ECONO2-1.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSM10GD120DN2E3224BOSA1 electronic components. BSM10GD120DN2E3224BOSA1 can be shipped within 24 hours after order. If you have any demands for BSM10GD120DN2E3224BOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM10GD120DN2E3224BOSA1 Atribi pwodwi yo
Nimewo Pati :
BSM10GD120DN2E3224BOSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 2 LOW POWER ECONO2-1
Seri :
-
Estati Pati :
Not For New Designs
Kalite IGBT :
-
Nou konte genyen :
Full Bridge
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
15A
Pouvwa - Max :
80W
Vce (sou) (Max) @ Vge, Ic :
3.2V @ 15V, 10A
Kouran - Cutoff Pèseptè (Max) :
400µA
Antre kapasite (Cies) @ Vce :
530pF @ 25V
Antre :
Standard
NTC thermistor :
No
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
Module
Pake Aparèy Founisè :
Module
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