Littelfuse Inc. - DST10100S

KEY Part #: K6455811

DST10100S Pricing (USD) [261964PC Stock]

  • 1 pcs$0.14119
  • 5,000 pcs$0.13413
  • 10,000 pcs$0.12909
  • 25,000 pcs$0.12506

Nimewo Pati:
DST10100S
Manifakti:
Littelfuse Inc.
Detaye deskripsyon:
DIODE SCHOTTKY 10A 100V TO-277B. Schottky Diodes & Rectifiers 100V 10A
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Tiristors - TRIACs and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Littelfuse Inc. DST10100S electronic components. DST10100S can be shipped within 24 hours after order. If you have any demands for DST10100S, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DST10100S Atribi pwodwi yo

Nimewo Pati : DST10100S
Manifakti : Littelfuse Inc.
Deskripsyon : DIODE SCHOTTKY 10A 100V TO-277B
Seri : -
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 10A
Voltage - Forward (Vf) (Max) @ Si : 700mV @ 10A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 250µA @ 100V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-277, 3-PowerDFN
Pake Aparèy Founisè : TO-277B
Operating Tanperati - Junction : -55°C ~ 150°C

Ou ka enterese tou
  • BAT54E6327HTSA1

    Infineon Technologies

    DIODE SCHOTTKY 30V 200MA SOT23-3.

  • BAS16E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching AF DIODE 85V 0.25A

  • DB3X317K0L

    Panasonic Electronic Components

    DIODE SCHOTTKY 30V 1A MINI3.

  • CMDD6001 TR

    Central Semiconductor Corp

    DIODE GEN PURP 75V 250MA SOD323. Diodes - General Purpose, Power, Switching Ultra Low Leakage 71Vr 100Vrrm 250mA

  • VS-5EWH06FNTR-M3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 5A DPAK. Rectifiers Hyperfast 5A 600V 18ns

  • 1N4150W-E3-08

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns