EPC2101ENGRT Pricing (USD) [19588PC Stock]
- 1 pcs$2.32586
- 500 pcs$2.31429
- Nimewo Pati:
- EPC2101ENGRT
- Manifakti:
- EPC
- Detaye deskripsyon:
- GAN TRANS ASYMMETRICAL HALF BRID.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Diodes - RF and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in EPC EPC2101ENGRT electronic components. EPC2101ENGRT can be shipped within 24 hours after order. If you have any demands for EPC2101ENGRT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2101ENGRT Atribi pwodwi yo
Nimewo Pati :
EPC2101ENGRT
Manifakti :
EPC
Deskripsyon :
GAN TRANS ASYMMETRICAL HALF BRID
Seri :
eGaN®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.5A, 38A
RD sou (Max) @ Id, Vgs :
11.5 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 2mA
Chaje Gate (Qg) (Max) @ Vgs :
2.7nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
300pF @ 30V
Pouvwa - Max :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
Die
Pake Aparèy Founisè :
Die
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