[4678PC Stock]
- Nimewo Pati:
- SI1539DDL-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N/P-CH 30V SC70-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Rèkteur - Single, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI1539DDL-T1-GE3 electronic components. SI1539DDL-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1539DDL-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1539DDL-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI1539DDL-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 30V SC70-6
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
N and P-Channel
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
700mA (Tc), 460mA (Tc)
RD sou (Max) @ Id, Vgs :
388 mOhm @ 600mA, 10V, 1.07 Ohm @ 400mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA, 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.1nC @ 4.5V, 1.2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
28pF @ 15V, 21pF @ 15V
Pouvwa - Max :
340mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
SC-70-6
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