Diodes Incorporated - 2N7002E-7-F

KEY Part #: K6419565

2N7002E-7-F Pricing (USD) [1712846PC Stock]

  • 1 pcs$0.02159
  • 3,000 pcs$0.02001

Nimewo Pati:
2N7002E-7-F
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 60V 0.25A SOT23-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2N7002E-7-F Atribi pwodwi yo

Nimewo Pati : 2N7002E-7-F
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 60V 0.25A SOT23-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 250mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 3 Ohm @ 250mA, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 0.22nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 50pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 370mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3
Pake / Ka : TO-236-3, SC-59, SOT-23-3