[9254PC Stock]
- Nimewo Pati:
- IRG4PH30KD
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 1200V 20A 100W TO247AC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - Zener - Single, Modil pouvwa chofè, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRG4PH30KD electronic components. IRG4PH30KD can be shipped within 24 hours after order. If you have any demands for IRG4PH30KD, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRG4PH30KD Atribi pwodwi yo
Nimewo Pati :
IRG4PH30KD
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 1200V 20A 100W TO247AC
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
20A
Kouran - Pèseptè batman (Icm) :
40A
Vce (sou) (Max) @ Vge, Ic :
4.2V @ 15V, 10A
Pouvwa - Max :
100W
Oblije chanje enèji :
950µJ (on), 1.15mJ (off)
Kalite Antre :
Standard
Gate chaje :
53nC
Td (on / off) @ 25 ° C :
39ns/220ns
Kondisyon egzamen an :
800V, 10A, 23 Ohm, 15V
Ranvèse Tan Reverse (trr) :
50ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247AC
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