[9282PC Stock]
- Nimewo Pati:
- IXER35N120D1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 1200V 50A 200W TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXER35N120D1 electronic components. IXER35N120D1 can be shipped within 24 hours after order. If you have any demands for IXER35N120D1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXER35N120D1 Atribi pwodwi yo
Nimewo Pati :
IXER35N120D1
Manifakti :
IXYS
Deskripsyon :
IGBT 1200V 50A 200W TO247
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
NPT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
50A
Kouran - Pèseptè batman (Icm) :
-
Vce (sou) (Max) @ Vge, Ic :
2.8V @ 15V, 35A
Pouvwa - Max :
200W
Oblije chanje enèji :
5.4mJ (on), 2.6mJ (off)
Kalite Antre :
Standard
Gate chaje :
150nC
Td (on / off) @ 25 ° C :
-
Kondisyon egzamen an :
600V, 35A, 39 Ohm, 15V
Ranvèse Tan Reverse (trr) :
80ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
ISOPLUS247™
Pake Aparèy Founisè :
ISOPLUS247™
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