NGTB10N60R2DT4G Pricing (USD) [9228PC Stock]
- 2,500 pcs$0.24215
- 5,000 pcs$0.23062
- Nimewo Pati:
- NGTB10N60R2DT4G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 10A 600V DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Diodes - RF, Tiristors - SCR, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NGTB10N60R2DT4G electronic components. NGTB10N60R2DT4G can be shipped within 24 hours after order. If you have any demands for NGTB10N60R2DT4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NGTB10N60R2DT4G Atribi pwodwi yo
Nimewo Pati :
NGTB10N60R2DT4G
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 10A 600V DPAK
Seri :
-
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
20A
Kouran - Pèseptè batman (Icm) :
40A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 10A
Pouvwa - Max :
72W
Oblije chanje enèji :
412µJ (on), 140µJ (off)
Kalite Antre :
Standard
Gate chaje :
53nC
Td (on / off) @ 25 ° C :
48ns/120ns
Kondisyon egzamen an :
300V, 10A, 30 Ohm, 15V
Ranvèse Tan Reverse (trr) :
90ns
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
DPAK
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