TPC6110(TE85L,F,M) Pricing (USD) [395690PC Stock]
- 1 pcs$0.10334
- 3,000 pcs$0.10283
- Nimewo Pati:
- TPC6110(TE85L,F,M)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET P-CH 30V 4.5A VS6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Diodes - RF, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPC6110(TE85L,F,M) electronic components. TPC6110(TE85L,F,M) can be shipped within 24 hours after order. If you have any demands for TPC6110(TE85L,F,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC6110(TE85L,F,M) Atribi pwodwi yo
Nimewo Pati :
TPC6110(TE85L,F,M)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 30V 4.5A VS6
Seri :
U-MOSVI
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
56 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id :
2V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
510pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
700mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
VS-6 (2.9x2.8)
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
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