Toshiba Semiconductor and Storage - TPC6113(TE85L,F,M)

KEY Part #: K6421262

TPC6113(TE85L,F,M) Pricing (USD) [410451PC Stock]

  • 1 pcs$0.09962
  • 3,000 pcs$0.09913

Nimewo Pati:
TPC6113(TE85L,F,M)
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET P-CH 20V 5A VS6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TPC6113(TE85L,F,M) electronic components. TPC6113(TE85L,F,M) can be shipped within 24 hours after order. If you have any demands for TPC6113(TE85L,F,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPC6113(TE85L,F,M) Atribi pwodwi yo

Nimewo Pati : TPC6113(TE85L,F,M)
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET P-CH 20V 5A VS6
Seri : U-MOSVI
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 55 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs : 10nC @ 5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 690pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : VS-6 (2.9x2.8)
Pake / Ka : SOT-23-6 Thin, TSOT-23-6

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