Vishay Semiconductor Diodes Division - VS-150EBU02

KEY Part #: K6445422

VS-150EBU02 Pricing (USD) [12098PC Stock]

  • 1 pcs$2.96591
  • 10 pcs$2.68034
  • 25 pcs$2.55588
  • 100 pcs$2.21919
  • 250 pcs$2.11947
  • 500 pcs$1.93246
  • 1,000 pcs$1.68311

Nimewo Pati:
VS-150EBU02
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GP 200V 150A POWIRTAB. Rectifiers 200 Volt 150 Amp
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Diodes - Zener - Arrays and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-150EBU02 electronic components. VS-150EBU02 can be shipped within 24 hours after order. If you have any demands for VS-150EBU02, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-150EBU02 Atribi pwodwi yo

Nimewo Pati : VS-150EBU02
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GP 200V 150A POWIRTAB
Seri : FRED Pt®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 150A
Voltage - Forward (Vf) (Max) @ Si : 1.13V @ 150A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 45ns
Kouran - Fèy Reverse @ Vr : 50µA @ 200V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : PowerTab™, PowIRtab™
Pake Aparèy Founisè : PowIRtab™
Operating Tanperati - Junction : -55°C ~ 175°C

Ou ka enterese tou
  • C2D05120E

    Cree/Wolfspeed

    DIODE SCHOTTKY 1.2KV 17.5A TO252.

  • VS-20ETF04FPPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 20A TO220FP.

  • IDB23E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 41A TO263-3.

  • IDB12E120ATMA1

    Infineon Technologies

    DIODE GEN PURP 1.2KV 28A TO263-3.

  • VS-80EPS08PBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 80A TO247AC.

  • VS-80EPF12PBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1.2KV 80A TO247AC.