Nimewo Pati :
SI7190DP-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 250V 18.4A PPAK SO-8
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
118 mOhm @ 4.4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
72nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2214pF @ 125V
Disipasyon Pouvwa (Max) :
5.4W (Ta), 96W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® SO-8
Pake / Ka :
PowerPAK® SO-8