Vishay Siliconix - SI7190DP-T1-GE3

KEY Part #: K6411783

SI7190DP-T1-GE3 Pricing (USD) [89398PC Stock]

  • 1 pcs$0.96999
  • 10 pcs$0.87550
  • 100 pcs$0.70345
  • 500 pcs$0.54713
  • 1,000 pcs$0.45334

Nimewo Pati:
SI7190DP-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 250V 18.4A PPAK SO-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI7190DP-T1-GE3 electronic components. SI7190DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7190DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7190DP-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI7190DP-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 250V 18.4A PPAK SO-8
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 118 mOhm @ 4.4A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 72nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2214pF @ 125V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 5.4W (Ta), 96W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SO-8
Pake / Ka : PowerPAK® SO-8