[1053PC Stock]
- Nimewo Pati:
- FP75R07N2E4B11BOSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT MODULE VCES 600V 75A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Tiristors - SCR and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies FP75R07N2E4B11BOSA1 electronic components. FP75R07N2E4B11BOSA1 can be shipped within 24 hours after order. If you have any demands for FP75R07N2E4B11BOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FP75R07N2E4B11BOSA1 Atribi pwodwi yo
Nimewo Pati :
FP75R07N2E4B11BOSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT MODULE VCES 600V 75A
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
Trench Field Stop
Nou konte genyen :
Three Phase Inverter
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
75A
Pouvwa - Max :
-
Vce (sou) (Max) @ Vge, Ic :
1.95V @ 15V, 75A
Kouran - Cutoff Pèseptè (Max) :
1mA
Antre kapasite (Cies) @ Vce :
4.6nF @ 25V
Antre :
Standard
NTC thermistor :
Yes
Operating Tanperati :
-40°C ~ 150°C
Mounting Kalite :
Chassis Mount
Pake / Ka :
Module
Pake Aparèy Founisè :
Module
Dènye nouvèl
Ou ka enterese tou
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VS-GB75NA60UF
Vishay Semiconductor Diodes Division
IGBT 600V 70A HS CHOPPER SOT-227. Rectifiers Output & SW Modules SOT-227 IGBT
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