APT45GP120B2DQ2G Pricing (USD) [4228PC Stock]
- 1 pcs$10.24356
- 10 pcs$9.47356
- 25 pcs$8.70522
- 100 pcs$7.69608
- 250 pcs$7.06285
- Nimewo Pati:
- APT45GP120B2DQ2G
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- IGBT 1200V 113A 625W TMAX.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT45GP120B2DQ2G electronic components. APT45GP120B2DQ2G can be shipped within 24 hours after order. If you have any demands for APT45GP120B2DQ2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT45GP120B2DQ2G Atribi pwodwi yo
Nimewo Pati :
APT45GP120B2DQ2G
Manifakti :
Microsemi Corporation
Deskripsyon :
IGBT 1200V 113A 625W TMAX
Seri :
POWER MOS 7®
Estati Pati :
Active
Kalite IGBT :
PT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
113A
Kouran - Pèseptè batman (Icm) :
170A
Vce (sou) (Max) @ Vge, Ic :
3.9V @ 15V, 45A
Pouvwa - Max :
625W
Oblije chanje enèji :
900µJ (on), 905µJ (off)
Kalite Antre :
Standard
Gate chaje :
185nC
Td (on / off) @ 25 ° C :
18ns/100ns
Kondisyon egzamen an :
600V, 45A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3 Variant
Pake Aparèy Founisè :
-
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