Nimewo Pati :
DMC1229UFDB-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N/P-CH 12V U-DFN2020-6
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.6A, 3.8A
RD sou (Max) @ Id, Vgs :
29 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
19.6nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds :
914pF @ 6V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-UDFN Exposed Pad
Pake Aparèy Founisè :
U-DFN2020-6 (Type B)