Infineon Technologies - IRG8P60N120KDPBF

KEY Part #: K6423600

[9597PC Stock]


    Nimewo Pati:
    IRG8P60N120KDPBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    IGBT 1200V 100A 420W TO-247AC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo and Diodes - Zener - Single ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRG8P60N120KDPBF electronic components. IRG8P60N120KDPBF can be shipped within 24 hours after order. If you have any demands for IRG8P60N120KDPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRG8P60N120KDPBF Atribi pwodwi yo

    Nimewo Pati : IRG8P60N120KDPBF
    Manifakti : Infineon Technologies
    Deskripsyon : IGBT 1200V 100A 420W TO-247AC
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : -
    Voltage - Pèseptè ki emèt deba (Max) : 1200V
    Kouran - Pèseptè (Ic) (Max) : 100A
    Kouran - Pèseptè batman (Icm) : 120A
    Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 40A
    Pouvwa - Max : 420W
    Oblije chanje enèji : 2.8mJ (on), 2.3mJ (off)
    Kalite Antre : Standard
    Gate chaje : 345nC
    Td (on / off) @ 25 ° C : 40ns/240ns
    Kondisyon egzamen an : 600V, 40A, 5 Ohm, 15V
    Ranvèse Tan Reverse (trr) : 210ns
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-247-3
    Pake Aparèy Founisè : TO-247AC