Manifakti :
Alpha & Omega Semiconductor Inc.
Deskripsyon :
MOSFET 2N-CH 20V 6A 8-DFN
FET Kalite :
2 N-Channel (Dual) Common Drain
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A
RD sou (Max) @ Id, Vgs :
26 mOhm @ 6.8A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
500pF @ 10V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SMD, Flat Lead
Pake Aparèy Founisè :
8-DFN (2.9x2.3)