[2235PC Stock]
- Nimewo Pati:
- JAN2N6766T1
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET N-CH TO-254AA.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Tiristors - TRIACs and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation JAN2N6766T1 electronic components. JAN2N6766T1 can be shipped within 24 hours after order. If you have any demands for JAN2N6766T1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JAN2N6766T1 Atribi pwodwi yo
Nimewo Pati :
JAN2N6766T1
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET N-CH TO-254AA
Seri :
Military, MIL-PRF-19500/543
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
90 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
115nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
4W (Ta), 150W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-254AA
Pake / Ka :
TO-254-3, TO-254AA (Straight Leads)
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