SIDR402DP-T1-GE3 Pricing (USD) [71648PC Stock]
- 1 pcs$0.54573
- Nimewo Pati:
- SIDR402DP-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CHAN 40V PPSO-8DC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIDR402DP-T1-GE3 electronic components. SIDR402DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIDR402DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIDR402DP-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIDR402DP-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CHAN 40V PPSO-8DC
Seri :
TrenchFET® Gen IV
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
64.6A (Ta), 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
0.88 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
165nC @ 10V
Vgs (Max) :
+20V, -16V
Antre kapasite (Ciss) (Max) @ Vds :
9100pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
6.25W (Ta), 125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® SO-8DC
Pake / Ka :
PowerPAK® SO-8
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