IXYS - IXTB62N50L

KEY Part #: K6397936

IXTB62N50L Pricing (USD) [2201PC Stock]

  • 1 pcs$21.65464
  • 10 pcs$20.25177
  • 100 pcs$17.55930

Nimewo Pati:
IXTB62N50L
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 62A PLUS264.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXTB62N50L electronic components. IXTB62N50L can be shipped within 24 hours after order. If you have any demands for IXTB62N50L, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTB62N50L Atribi pwodwi yo

Nimewo Pati : IXTB62N50L
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 62A PLUS264
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 62A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 20V
RD sou (Max) @ Id, Vgs : 100 mOhm @ 31A, 20V
Vgs (th) (Max) @ Id : 5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 550nC @ 20V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 11500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 800W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PLUS264™
Pake / Ka : TO-264-3, TO-264AA

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