Nimewo Pati :
APTGFQ25H120T2G
Manifakti :
Microsemi Corporation
Deskripsyon :
IGBT 1200V 40A 227W MODULE
Estati Pati :
Not For New Designs
Kalite IGBT :
NPT and Fieldstop
Nou konte genyen :
Full Bridge
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
40A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 25A
Kouran - Cutoff Pèseptè (Max) :
250µA
Antre kapasite (Cies) @ Vce :
2.02nF @ 25V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
SP2