Microsemi Corporation - APT50GN60BDQ2G

KEY Part #: K6422166

APT50GN60BDQ2G Pricing (USD) [14536PC Stock]

  • 1 pcs$3.45949
  • 10 pcs$3.11178
  • 25 pcs$2.83493
  • 100 pcs$2.55844
  • 250 pcs$2.35098
  • 500 pcs$2.14354
  • 1,000 pcs$1.86696

Nimewo Pati:
APT50GN60BDQ2G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 600V 107A 366W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays and Tiristors - TRIACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT50GN60BDQ2G Atribi pwodwi yo

Nimewo Pati : APT50GN60BDQ2G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 600V 107A 366W TO247
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 107A
Kouran - Pèseptè batman (Icm) : 150A
Vce (sou) (Max) @ Vge, Ic : 1.85V @ 15V, 50A
Pouvwa - Max : 366W
Oblije chanje enèji : 1185µJ (on), 1565µJ (off)
Kalite Antre : Standard
Gate chaje : 325nC
Td (on / off) @ 25 ° C : 20ns/230ns
Kondisyon egzamen an : 400V, 50A, 4.3 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247 [B]

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