Nimewo Pati :
APT75GN120B2G
Manifakti :
Microsemi Corporation
Deskripsyon :
IGBT 1200V 200A 833W TMAX
Estati Pati :
Not For New Designs
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
200A
Kouran - Pèseptè batman (Icm) :
225A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 75A
Oblije chanje enèji :
8045µJ (on), 7640µJ (off)
Td (on / off) @ 25 ° C :
60ns/620ns
Kondisyon egzamen an :
800V, 75A, 1 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3 Variant