Microsemi Corporation - APT75GN120B2G

KEY Part #: K6423246

APT75GN120B2G Pricing (USD) [6404PC Stock]

  • 1 pcs$6.46756
  • 34 pcs$6.43539

Nimewo Pati:
APT75GN120B2G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 1200V 200A 833W TMAX.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT75GN120B2G Atribi pwodwi yo

Nimewo Pati : APT75GN120B2G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 1200V 200A 833W TMAX
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 200A
Kouran - Pèseptè batman (Icm) : 225A
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 75A
Pouvwa - Max : 833W
Oblije chanje enèji : 8045µJ (on), 7640µJ (off)
Kalite Antre : Standard
Gate chaje : 425nC
Td (on / off) @ 25 ° C : 60ns/620ns
Kondisyon egzamen an : 800V, 75A, 1 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3 Variant
Pake Aparèy Founisè : -