HGTD1N120BNS9A Pricing (USD) [136878PC Stock]
- 1 pcs$0.27022
- 2,500 pcs$0.26133
- 5,000 pcs$0.24889
- Nimewo Pati:
- HGTD1N120BNS9A
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 1200V 5.3A 60W TO252AA.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Diodes - Zener - Arrays, Tiristors - TRIACs, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor HGTD1N120BNS9A electronic components. HGTD1N120BNS9A can be shipped within 24 hours after order. If you have any demands for HGTD1N120BNS9A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTD1N120BNS9A Atribi pwodwi yo
Nimewo Pati :
HGTD1N120BNS9A
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 1200V 5.3A 60W TO252AA
Seri :
-
Estati Pati :
Active
Kalite IGBT :
NPT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
5.3A
Kouran - Pèseptè batman (Icm) :
6A
Vce (sou) (Max) @ Vge, Ic :
2.9V @ 15V, 1A
Pouvwa - Max :
60W
Oblije chanje enèji :
70µJ (on), 90µJ (off)
Kalite Antre :
Standard
Gate chaje :
14nC
Td (on / off) @ 25 ° C :
15ns/67ns
Kondisyon egzamen an :
960V, 1A, 82 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
TO-252AA
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