IXFN80N50Q3 Pricing (USD) [2401PC Stock]
- 1 pcs$20.74657
- 10 pcs$19.19081
- 100 pcs$16.39016
- Nimewo Pati:
- IXFN80N50Q3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 500V 63A SOT-227.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Tiristors - TRIACs, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXFN80N50Q3 electronic components. IXFN80N50Q3 can be shipped within 24 hours after order. If you have any demands for IXFN80N50Q3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN80N50Q3 Atribi pwodwi yo
Nimewo Pati :
IXFN80N50Q3
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 500V 63A SOT-227
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
63A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
65 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
6.5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
200nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
10000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
780W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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