Infineon Technologies - SGD02N60BUMA1

KEY Part #: K6424957

SGD02N60BUMA1 Pricing (USD) [169246PC Stock]

  • 1 pcs$0.21854
  • 2,500 pcs$0.17750

Nimewo Pati:
SGD02N60BUMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 600V 6A 30W TO252-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Infineon Technologies SGD02N60BUMA1 electronic components. SGD02N60BUMA1 can be shipped within 24 hours after order. If you have any demands for SGD02N60BUMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SGD02N60BUMA1 Atribi pwodwi yo

Nimewo Pati : SGD02N60BUMA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 600V 6A 30W TO252-3
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : NPT
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 6A
Kouran - Pèseptè batman (Icm) : 12A
Vce (sou) (Max) @ Vge, Ic : 2.4V @ 15V, 2A
Pouvwa - Max : 30W
Oblije chanje enèji : 64µJ
Kalite Antre : Standard
Gate chaje : 14nC
Td (on / off) @ 25 ° C : 20ns/259ns
Kondisyon egzamen an : 400V, 2A, 118 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : PG-TO252-3