Vishay Semiconductor Diodes Division - VS-1N1190R

KEY Part #: K6440364

VS-1N1190R Pricing (USD) [11335PC Stock]

  • 1 pcs$3.00557
  • 10 pcs$2.71603
  • 25 pcs$2.58973
  • 100 pcs$2.24863
  • 250 pcs$2.14755
  • 500 pcs$1.95807
  • 1,000 pcs$1.70541

Nimewo Pati:
VS-1N1190R
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 35A DO203AB. Rectifiers 600 Volt 35 Amp
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-1N1190R electronic components. VS-1N1190R can be shipped within 24 hours after order. If you have any demands for VS-1N1190R, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-1N1190R Atribi pwodwi yo

Nimewo Pati : VS-1N1190R
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 35A DO203AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard, Reverse Polarity
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 35A
Voltage - Forward (Vf) (Max) @ Si : 1.7V @ 110A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 10mA @ 600V
Kapasite @ Vr, F : -
Mounting Kalite : Chassis, Stud Mount
Pake / Ka : DO-203AB, DO-5, Stud
Pake Aparèy Founisè : DO-203AB
Operating Tanperati - Junction : -65°C ~ 190°C

Ou ka enterese tou
  • IDB30E120ATMA1

    Infineon Technologies

    DIODE GEN PURP 1.2KV 50A TO263-3. Diodes - General Purpose, Power, Switching FAST SWITCH EMCON DIODE 1200V 30A

  • IDB30E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 52.3A TO263.

  • ES2AHM3/5BT

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 2A DO214AA. Rectifiers 2A,50V,20NS,UF Rect,SMD

  • EGP20B-E3/54

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 2A DO204AC. Rectifiers 2.0 Amp 100 Volt

  • 1N4585GP-E3/54

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 1A DO204AC. Rectifiers 1A,800V,STD SUPERECT,DO-15

  • GP15M-E3/54

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1KV 1.5A DO204. Rectifiers 1000 Volt 1.5 Amp 50 Amp IFSM