IXTT16P60P Pricing (USD) [9352PC Stock]
- 1 pcs$5.06805
- 10 pcs$4.56124
- 100 pcs$3.75036
- 500 pcs$3.14219
- Nimewo Pati:
- IXTT16P60P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET P-CH 600V 16A TO-268.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in IXYS IXTT16P60P electronic components. IXTT16P60P can be shipped within 24 hours after order. If you have any demands for IXTT16P60P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTT16P60P Atribi pwodwi yo
Nimewo Pati :
IXTT16P60P
Manifakti :
IXYS
Deskripsyon :
MOSFET P-CH 600V 16A TO-268
Seri :
PolarP™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
16A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
720 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
92nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5120pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
460W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-268
Pake / Ka :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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