[996PC Stock]
- Nimewo Pati:
- 2SK1119(F)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 1000V 4A TO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Diodes - RF, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage 2SK1119(F) electronic components. 2SK1119(F) can be shipped within 24 hours after order. If you have any demands for 2SK1119(F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK1119(F) Atribi pwodwi yo
Nimewo Pati :
2SK1119(F)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 1000V 4A TO-220AB
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3.8 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
60nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
700pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
100W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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