Microsemi Corporation - APTGT50H60T3G

KEY Part #: K6532650

APTGT50H60T3G Pricing (USD) [1633PC Stock]

  • 1 pcs$27.83043
  • 10 pcs$26.19128
  • 25 pcs$24.55453
  • 100 pcs$23.40865

Nimewo Pati:
APTGT50H60T3G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
POWER MOD IGBT3 FULL BRIDGE SP3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè, Diodes - Zener - Single, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APTGT50H60T3G electronic components. APTGT50H60T3G can be shipped within 24 hours after order. If you have any demands for APTGT50H60T3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTGT50H60T3G Atribi pwodwi yo

Nimewo Pati : APTGT50H60T3G
Manifakti : Microsemi Corporation
Deskripsyon : POWER MOD IGBT3 FULL BRIDGE SP3
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Full Bridge Inverter
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 80A
Pouvwa - Max : 176W
Vce (sou) (Max) @ Vge, Ic : 1.9V @ 15V, 50A
Kouran - Cutoff Pèseptè (Max) : 250µA
Antre kapasite (Cies) @ Vce : 3.15nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SP3
Pake Aparèy Founisè : SP3

Ou ka enterese tou
  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • CPV362M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 31 IMS-2.

  • CPV362M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 3.9A IMS-2.

  • CPV363M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6.8A IMS-2.

  • A2C25S12M3-F

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.