IXYS - IXFN80N48

KEY Part #: K6401049

IXFN80N48 Pricing (USD) [2274PC Stock]

  • 1 pcs$20.08763
  • 10 pcs$19.98769

Nimewo Pati:
IXFN80N48
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 480V 80A SOT-227B.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Diodes - Zener - Single and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in IXYS IXFN80N48 electronic components. IXFN80N48 can be shipped within 24 hours after order. If you have any demands for IXFN80N48, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN80N48 Atribi pwodwi yo

Nimewo Pati : IXFN80N48
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 480V 80A SOT-227B
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 480V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 45 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 380nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 9890pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SOT-227B
Pake / Ka : SOT-227-4, miniBLOC