Microsemi Corporation - JAN1N5550

KEY Part #: K6429310

JAN1N5550 Pricing (USD) [8054PC Stock]

  • 1 pcs$4.60531
  • 10 pcs$4.14478
  • 25 pcs$3.77645
  • 100 pcs$3.40793
  • 250 pcs$3.13161
  • 500 pcs$2.85530

Nimewo Pati:
JAN1N5550
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
DIODE GEN PURP 200V 3A AXIAL. ESD Suppressors / TVS Diodes D MET 3A STD 200V
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Microsemi Corporation JAN1N5550 electronic components. JAN1N5550 can be shipped within 24 hours after order. If you have any demands for JAN1N5550, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5550 Atribi pwodwi yo

Nimewo Pati : JAN1N5550
Manifakti : Microsemi Corporation
Deskripsyon : DIODE GEN PURP 200V 3A AXIAL
Seri : Military, MIL-PRF-19500/420
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.2V @ 9A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2µs
Kouran - Fèy Reverse @ Vr : 1µA @ 200V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : B, Axial
Pake Aparèy Founisè : -
Operating Tanperati - Junction : -65°C ~ 175°C

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