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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APTC80DA15T1G

Microsemi Corporation - APTC80DA15T1G

KEY Part #: K6413165

[13194PC Stock]

    Nimewo Pati:
    APTC80DA15T1G
    Manifakti:
    Microsemi Corporation
    Detaye deskripsyon:
    MOSFET N-CH 800V 28A SP1.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Diodes - Zener - Single and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in Microsemi Corporation APTC80DA15T1G electronic components. APTC80DA15T1G can be shipped within 24 hours after order. If you have any demands for APTC80DA15T1G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    APTC80DA15T1G Atribi pwodwi yo

    Nimewo Pati : APTC80DA15T1G
    Manifakti : Microsemi Corporation
    Deskripsyon : MOSFET N-CH 800V 28A SP1
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 800V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 28A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 150 mOhm @ 14A, 10V
    Vgs (th) (Max) @ Id : 3.9V @ 2mA
    Chaje Gate (Qg) (Max) @ Vgs : 180nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 4507pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 277W (Tc)
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Chassis Mount
    Pake Aparèy Founisè : SP1
    Pake / Ka : SP1

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