Infineon Technologies - IRFSL7437PBF

KEY Part #: K6398408

IRFSL7437PBF Pricing (USD) [42703PC Stock]

  • 1 pcs$0.87801
  • 10 pcs$0.79439
  • 100 pcs$0.63827
  • 500 pcs$0.49643
  • 1,000 pcs$0.41133

Nimewo Pati:
IRFSL7437PBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N CH 40V 195A TO-262.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFSL7437PBF electronic components. IRFSL7437PBF can be shipped within 24 hours after order. If you have any demands for IRFSL7437PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFSL7437PBF Atribi pwodwi yo

Nimewo Pati : IRFSL7437PBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N CH 40V 195A TO-262
Seri : HEXFET®, StrongIRFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 195A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 1.8 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs : 225nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 7330pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 230W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-262
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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