[4110PC Stock]
- Nimewo Pati:
- RJM0603JSC-00#12
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET 3N/3P-CH 60V 20A HSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America RJM0603JSC-00#12 electronic components. RJM0603JSC-00#12 can be shipped within 24 hours after order. If you have any demands for RJM0603JSC-00#12, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJM0603JSC-00#12 Atribi pwodwi yo
Nimewo Pati :
RJM0603JSC-00#12
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET 3N/3P-CH 60V 20A HSOP
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
3 N and 3 P-Channel (3-Phase Bridge)
Karakteristik FET :
Logic Level Gate, 4.5V Drive
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A
RD sou (Max) @ Id, Vgs :
20 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
43nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2600pF @ 10V
Pouvwa - Max :
54W
Operating Tanperati :
175°C
Mounting Kalite :
Surface Mount
Pake / Ka :
20-SOIC (0.433", 11.00mm Width) Exposed Pad
Pake Aparèy Founisè :
20-HSOP
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