Vishay Siliconix - SI6562DQ-T1-GE3

KEY Part #: K6523509

[4142PC Stock]


    Nimewo Pati:
    SI6562DQ-T1-GE3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N/P-CH 20V 8-TSSOP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo and Diodes - Zener - Arrays ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SI6562DQ-T1-GE3 electronic components. SI6562DQ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI6562DQ-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI6562DQ-T1-GE3 Atribi pwodwi yo

    Nimewo Pati : SI6562DQ-T1-GE3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N/P-CH 20V 8-TSSOP
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : N and P-Channel
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : -
    RD sou (Max) @ Id, Vgs : 30 mOhm @ 4.5A, 4.5V
    Vgs (th) (Max) @ Id : 600mV @ 250µA (Min)
    Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 4.5V
    Antre kapasite (Ciss) (Max) @ Vds : -
    Pouvwa - Max : 1W
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-TSSOP (0.173", 4.40mm Width)
    Pake Aparèy Founisè : 8-TSSOP