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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. 2N7002-G

Microchip Technology - 2N7002-G

KEY Part #: K6405150

2N7002-G Pricing (USD) [252214PC Stock]

  • 1 pcs$0.14665
  • 3,000 pcs$0.02388
Nimewo Pati:
2N7002-G
Manifakti:
Microchip Technology
Detaye deskripsyon:
MOSFET N-CH 60V 0.115A SOT23-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Zener - Single, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Modil pouvwa chofè and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Microchip Technology 2N7002-G electronic components. 2N7002-G can be shipped within 24 hours after order. If you have any demands for 2N7002-G, Please submit a Request for Quotation here or send us an email:
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ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2N7002-G Atribi pwodwi yo

Nimewo Pati : 2N7002-G
Manifakti : Microchip Technology
Deskripsyon : MOSFET N-CH 60V 0.115A SOT23-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 115mA (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 50pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 360mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23 (TO-236AB)
Pake / Ka : TO-236-3, SC-59, SOT-23-3
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