Diodes Incorporated - DMP6110SVTQ-7

KEY Part #: K6405057

DMP6110SVTQ-7 Pricing (USD) [297714PC Stock]

  • 1 pcs$0.12424
  • 3,000 pcs$0.11040

Nimewo Pati:
DMP6110SVTQ-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET BVDSS 41V 60V TSOT26.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMP6110SVTQ-7 Atribi pwodwi yo

Nimewo Pati : DMP6110SVTQ-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET BVDSS 41V 60V TSOT26
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 105 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 17.2nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 969pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.8W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TSOT-26
Pake / Ka : SOT-23-6 Thin, TSOT-23-6